Other articles related with "oxygen vacancy":
58201 Shuai Peng(彭率), Li-Juan Chen(陈丽娟), Chang-Chun He(何长春), and Xiao-Bao Yang(杨小宝)
  Atomistic understanding of capacity loss in LiNiO$_{\bf 2}$ for high-nickel Li-ion batteries: First-principles study
    Chin. Phys. B   2024 Vol.33 (5): 58201-058201 [Abstract] (15) [HTML 0 KB] [PDF 1646 KB] (0)
87504 Yang-Yang Fan(范洋洋), Jing Wang(王晶), Feng-Xia Hu(胡凤霞), Bao-He Li(李宝河), Ai-Cong Geng(耿爱丛), Zhuo Yin(殷卓), Cheng Zhang(张丞), Hou-Bo Zhou(周厚博), Meng-Qin Wang(王梦琴), Zi-Bing Yu(尉紫冰), and Bao-Gen Shen(沈保根)
  Low-temperature ferromagnetism in tensile-strained LaCoO2.5 thin film
    Chin. Phys. B   2023 Vol.32 (8): 87504-087504 [Abstract] (133) [HTML 1 KB] [PDF 1986 KB] (76)
107102 Han Xu(许涵), Tongtong Shang(尚彤彤), Xuefeng Wang(王雪锋), Ang Gao(高昂), and Lin Gu(谷林)
  Origin of the low formation energy of oxygen vacancies in CeO2
    Chin. Phys. B   2022 Vol.31 (10): 107102-107102 [Abstract] (261) [HTML 1 KB] [PDF 2146 KB] (106)
88502 Yilin Li(李屹林), Hui Zhu(朱慧), Rui Li(李锐), Jie Liu(柳杰), Jinjuan Xiang(项金娟), Na Xie(解娜), Zeng Huang(黄增), Zhixuan Fang(方志轩), Xing Liu(刘行), and Lixing Zhou(周丽星)
  Wake-up effect in Hf0.4Zr0.6O2 ferroelectric thin-film capacitors under a cycling electric field
    Chin. Phys. B   2022 Vol.31 (8): 88502-088502 [Abstract] (392) [HTML 0 KB] [PDF 866 KB] (59)
77701 Xiaoting Sun(孙小婷), Yadong Zhang(张亚东), Kunpeng Jia(贾昆鹏), Guoliang Tian(田国良), Jiahan Yu(余嘉晗), Jinjuan Xiang(项金娟), Ruixia Yang(杨瑞霞), Zhenhua Wu(吴振华), and Huaxiang Yin(殷华湘)
  Improved performance of MoS2 FET by in situ NH3 doping in ALD Al2O3 dielectric
    Chin. Phys. B   2022 Vol.31 (7): 77701-077701 [Abstract] (351) [HTML 1 KB] [PDF 838 KB] (53)
126104 Haitao Zhou(周海涛), Lujia Cong(丛璐佳), Jiangang Ma(马剑钢), Bingsheng Li(李炳生), Haiyang Xu(徐海洋), and Yichun Liu(刘益春)
  Suppression of persistent photoconductivity in high gain Ga2O3 Schottky photodetectors
    Chin. Phys. B   2021 Vol.30 (12): 126104-126104 [Abstract] (344) [HTML 1 KB] [PDF 1522 KB] (176)
106102 Bo Sun(孙博), Dong He(贺栋), Hongbo Wang(王宏博), Jiangchao Liu(刘江超), Zunjian Ke(柯尊健), Li Cheng(程莉), and Xiangheng Xiao(肖湘衡)
  Oxygen vacancies and V co-doped Co3O4 prepared by ion implantation boosts oxygen evolution catalysis
    Chin. Phys. B   2021 Vol.30 (10): 106102-106102 [Abstract] (580) [HTML 0 KB] [PDF 2256 KB] (169)
103101 Yajing Zhang(张亚婧), Keke Song(宋可可), Shuo Cao(曹硕), Xiaodong Jian(建晓东), and Ping Qian(钱萍)
  Density functional theory study of formaldehyde adsorption and decomposition on Co-doped defective CeO2 (110) surface
    Chin. Phys. B   2021 Vol.30 (10): 103101-103101 [Abstract] (393) [HTML 0 KB] [PDF 1867 KB] (84)
87303 Hongyu Ma(马宏宇), Kewei Liu(刘可为), Zhen Cheng(程祯), Zhiyao Zheng(郑智遥), Yinzhe Liu(刘寅哲), Peixuan Zhang(张培宣), Xing Chen(陈星), Deming Liu(刘德明), Lei Liu(刘雷), and Dezhen Shen(申德振)
  Effect of surface oxygen vacancy defects on the performance of ZnO quantum dots ultraviolet photodetector
    Chin. Phys. B   2021 Vol.30 (8): 87303-087303 [Abstract] (471) [HTML 1 KB] [PDF 2949 KB] (190)
47103 Bao-Hua Zhou(周保花), Fu-Jie Zhang(张福杰), Xiao Liu(刘笑), Yu Song(宋宇), Xu Zuo(左旭)
  Ab initio calculations on oxygen vacancy defects in strained amorphous silica
    Chin. Phys. B   2020 Vol.29 (4): 47103-047103 [Abstract] (519) [HTML 1 KB] [PDF 1672 KB] (156)
128101 Jian-Ying Chen(陈建颖), Xin-Yuan Zhao(赵心愿), Lu Liu(刘璐), Jing-Ping Xu(徐静平)
  Improved performance of back-gate MoS2 transistors by NH3-plasma treating high-k gate dielectrics
    Chin. Phys. B   2019 Vol.28 (12): 128101-128101 [Abstract] (679) [HTML 1 KB] [PDF 1778 KB] (173)
87303 Zhi-Cheng Wang(王志成), Zhang-Zhang Cui(崔璋璋), Hui Xu(徐珲), Xiao-Fang Zhai(翟晓芳), Ya-Lin Lu(陆亚林)
  Effects of oxygen vacancy concentration and temperature on memristive behavior of SrRuO3/Nb:SrTiO3 junctions
    Chin. Phys. B   2019 Vol.28 (8): 87303-087303 [Abstract] (627) [HTML 1 KB] [PDF 998 KB] (181)
87702 Qi Mao(毛奇), Wei-Jian Lin(林伟坚), Ke-Jian Zhu(朱科建), Yang Meng(孟洋), Hong-Wu Zhao(赵宏武)
  Synergistic effects of electrical and optical excitations on TiO2 resistive device
    Chin. Phys. B   2017 Vol.26 (8): 87702-087702 [Abstract] (538) [HTML 1 KB] [PDF 512 KB] (225)
37101 Fu-Ning Wang(王芙凝), Ji-Chao Li(李吉超), Xin-Miao Zhang(张鑫淼), Han-Zhang Liu(刘汉璋), Jian Liu(刘剑), Chun-Lei Wang(王春雷), Ming-Lei Zhao(赵明磊), Wen-Bin Su(苏文斌), Liang-Mo Mei(梅良模)
  Electrical property effect of oxygen vacancies in the heterojunction of LaGaO3/SrTiO3
    Chin. Phys. B   2017 Vol.26 (3): 37101-037101 [Abstract] (688) [HTML 1 KB] [PDF 529 KB] (360)
36101 Abdolvahab Amirsalari, Saber Farjami Shayesteh, Reza Taheri Ghahrizjani
  Intrinsic luminescence centers in γ- and θ-alumina nanoparticles
    Chin. Phys. B   2017 Vol.26 (3): 36101-036101 [Abstract] (577) [HTML 0 KB] [PDF 6501 KB] (535)
127303 Han-Lu Ma(马寒露), Zhong-Qiang Wang(王中强), Hai-Yang Xu(徐海阳), Lei Zhang(张磊), Xiao-Ning Zhao(赵晓宁), Man-Shu Han(韩曼舒), Jian-Gang Ma(马剑钢), Yi-Chun Liu(刘益春)
  Coexistence of unipolar and bipolar modes in Ag/ZnO/Pt resistive switching memory with oxygen-vacancy and metal-Ag filaments
    Chin. Phys. B   2016 Vol.25 (12): 127303-127303 [Abstract] (785) [HTML 1 KB] [PDF 985 KB] (289)
57103 Wei Zhang(张玮), Jie Huang(黄洁)
  First-principles study of strain effect on the formation and electronic structures of oxygen vacancy in SrFeO2
    Chin. Phys. B   2016 Vol.25 (5): 57103-057103 [Abstract] (624) [HTML 1 KB] [PDF 1159 KB] (348)
106105 Li Hui-Ran (李会然), Cheng Xin-Lu (程新路), Zhang Hong (张红), Zhao Feng (赵峰)
  α-quartz[J]. Chinese Physics B, 2015,24(10): 106105-106105")'/> Influences of neutral oxygen vacancies and E1'centers on α-quartz
    Chin. Phys. B   2015 Vol.24 (10): 106105-106105 [Abstract] (577) [HTML 1 KB] [PDF 2466 KB] (330)
77802 Chen Xin (陈鑫), Zhao Qian-Qian (赵倩倩), Wang Xiao-Chun (王晓春), Chen Jun (陈军), Ju Xin (巨新)
  Linear optical properties of defective KDP with oxygen vacancy: First-principles calculations
    Chin. Phys. B   2015 Vol.24 (7): 77802-077802 [Abstract] (705) [HTML 1 KB] [PDF 1421 KB] (429)
57503 Xie Qian (谢谦), Wang Wei-Peng (王炜鹏), Xie Zheng (谢拯), Zhan Peng (战鹏), Li Zheng-Cao (李正操), Zhang Zheng-Jun (张政军)
  Room temperature ferromagnetism in un-doped amorphous HfO2 nano-helix arrays
    Chin. Phys. B   2015 Vol.24 (5): 57503-057503 [Abstract] (518) [HTML 1 KB] [PDF 620 KB] (430)
126101 M. Ismail, M. W. Abbas, A. M. Rana, I. Talib, E. Ahmed, M. Y. Nadeem, T. L. Tsai, U. Chand, N. A. Shah, M. Hussain, A. Aziz, M. T. Bhatti
  Bipolar tri-state resistive switching characteristics in Ti/CeOx/Pt memory device
    Chin. Phys. B   2014 Vol.23 (12): 126101-126101 [Abstract] (535) [HTML 1 KB] [PDF 743 KB] (388)
87304 Zhang Ting (张婷), Yin Jiang (殷江), Zhao Gao-Feng (赵高峰), Zhang Wei-Feng (张伟风), Xia Yi-Dong (夏奕东), Liu Zhi-Guo (刘治国)
  Bipolar resistance switching in the fully transparent BaSnO3-based memory device
    Chin. Phys. B   2014 Vol.23 (8): 87304-087304 [Abstract] (486) [HTML 1 KB] [PDF 2175 KB] (815)
87301 Li Min (李敏), Zhang Jun-Ying (张俊英), Zhang Yue (张跃), Wang Tian-min (王天民)
  Oxygen vacancy in N-doped Cu2O crystals: A density functional theory study
    Chin. Phys. B   2012 Vol.21 (8): 87301-087301 [Abstract] (1343) [HTML 1 KB] [PDF 6542 KB] (1508)
47503 Sun Yun-Bin(孙运斌), Zhang Xiang-Qun(张向群), Li Guo-Ke(李国科), and Cheng Zhao-Hua(成昭华)
  Effects of oxygen vacancy location on the electronic structure and spin density of Co-doped rutile TiO2 dilute magnetic semiconductors
    Chin. Phys. B   2012 Vol.21 (4): 47503-047503 [Abstract] (1110) [HTML 1 KB] [PDF 309 KB] (618)
47302 Liu Zi-Yu(刘紫玉), Zhang Pei-Jian(张培健), Meng Yang(孟洋), Li Dong(李栋), Meng Qing-Yu(孟庆宇), Li Jian-Qi(李建奇), and Zhao Hong-Wu(赵宏武)
  The influence of interfacial barrier engineering on the resistance switching of In2O3:SnO2/TiO2/In2O3:SnO2 device
    Chin. Phys. B   2012 Vol.21 (4): 47302-047302 [Abstract] (1171) [HTML 1 KB] [PDF 228 KB] (898)
47201 Zhang Jie(张洁), Liang Er-Jun(梁二军), Sun Qiang(孙强), and Jia Yu(贾瑜)
  Oxygen vacancy formation and migration in Sr- and Mg-doped LaGaO3: a density functional theory study
    Chin. Phys. B   2012 Vol.21 (4): 47201-047201 [Abstract] (1122) [HTML 1 KB] [PDF 780 KB] (1434)
27103 Weng Zhen-Zhen(翁臻臻), Zhang Jian-Min(张健敏), Huang Zhi-Gao(黄志高), and Lin Wen-Xiong(林文雄)
  Effect of oxygen vacancy defect on the magnetic properties of Co-doped ZnO
    Chin. Phys. B   2011 Vol.20 (2): 27103-027103 [Abstract] (1702) [HTML 1 KB] [PDF 2118 KB] (1878)
803 Wang Xiao-Juan(王晓娟), Gong Zhi-Qiang(龚志强), Zhu Jun(朱骏), and Chen Xiao-Bing(陈小兵)
  Structure, ferroelectric and dielectric properties of Bi2WO6 with different bismuth content
    Chin. Phys. B   2009 Vol.18 (2): 803-809 [Abstract] (1067) [HTML 1 KB] [PDF 1173 KB] (1340)
655 Tang Jin-Long(唐金龙), Zhu Jun(朱俊), Qin Wen-Feng(秦文峰),Xiong Jie(熊杰), and Li Yan-Rong(李言荣)
  Ab initio study of oxygen-vacancy LaAlO2(001) surface
    Chin. Phys. B   2008 Vol.17 (2): 655-661 [Abstract] (1285) [HTML 0 KB] [PDF 219 KB] (635)
1142 Liu Ting-Yu (刘廷禹), Zhang Qi-Ren (张启仁), Zhuang Song-Lin (庄松林)
  Optical polarized properties related to the oxygen vacancy defect in the PbWO4 crystal
    Chin. Phys. B   2005 Vol.14 (6): 1142-1146 [Abstract] (993) [HTML 1 KB] [PDF 250 KB] (783)
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